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Understanding how a ligand affects the steric and electronic properties of a metal is the cornerstone of the inorganic chemistry enterprise. What happens when the ligand is an extended surface? This question is central to the design and implementation of state-of-the-art functional materials containing transition metals. This perspective will describe how these two very different sets of extended surfaces can form well-defined coordination complexes with metals. In the Green formalism, functionalities on oxide surfaces react with inorganics to form species that contain X-type or LX-type interactions between the metal and the oxide. Carbon surfaces are neutral L-type ligands; this perspective focuses on carbons that donate six electrons to a metal. The nature of this interaction depends on the curvature, and thereby orbital overlap, between the metal and the extended π-system from the nanocarbon. 

The unique two-dimensional structure and outstanding electronic, thermal, and mechanical properties of graphene have attracted the interest of scientists and engineers from various fields. The first step in translating the excellent properties of graphene into practical applications is the preparation of large area, continuous graphene films. Chemical vapour deposition (CVD) graphene has received increasing attention because it provides access to large-area, uniform, and continuous films of high quality. However, current CVD synthetic techniques utilize metal substrates (Cu or Ni) to catalyse the growth of graphene and post-growth transfer of the graphene film to a substrate of interest is critical for most applications such as electronics, photonics, and spintronics. Here we discuss recent advances in the transfer of as-grown CVD graphene to target substrates. The methods that afford CVD graphene on a target substrate are summarized under three categories: transfer with a support layer, transfer without a support layer, and direct growth on target substrates. At present the first two groups dominate the field and research efforts are directed towards refining the choice of the support layer. The support layer plays a vital role in the transfer process because it has direct contact with the atomically thin graphene surface, affecting its properties and determining the quality of the transferred graphene.